Structural and Lattice-Dynamical Properties of Tb2O3 under Compression: A Comparative Study with Rare Earth and Related Sesquioxides

J Ibáñez, JÁ Sans, V Cuenca-Gotor, R Oliva… - Inorganic …, 2020 - ACS Publications
We report a joint experimental and theoretical investigation of the high pressure structural
and vibrational properties of terbium sesquioxide (Tb2O3). Powder X-ray diffraction and …

Oxygen Uptake of Tb–CeO2: Analysis of Ce3+ and Oxygen Vacancies

AM D'Angelo, ACY Liu, AL Chaffee - The Journal of Physical …, 2016 - ACS Publications
In response to concerns about the world's generation of greenhouse gases, there are
incentives to develop lower energy alternatives to cryogenic air separation. Oxygen sorbents …

Transformation of Amorphous Terbium Metal–Organic Framework on Terbium Oxide TbOx(111) Thin Film on Pt(111) Substrate: Structure of TbxOy Film

H Brunckova, E Mudra, M Streckova, L Medvecky… - Nanomaterials, 2022 - mdpi.com
The present study is focused on the synthesis and structural properties of amorphous
terbium metal–organic framework thin film (TbMOF-TF) and its transformation to terbium …

Electronic, structural and magnetic properties of TbO under pressure: FP-LAPW study

S Al-Qaisi, MS Abu-Jafar, GK Gopir, R Khenata - Phase Transitions, 2016 - Taylor & Francis
Using the framework of the density functional theory, we calculated electronic, magnetic and
structural properties of terbium oxide (TbO) in rocksalt (RS), cesium chloride (CsCl) and …

Influence of different annealing ambient on terbium oxide passivation layers sputtered using the RF sputtering on silicon substrate

AA Sifawa, SM Mohammad, A Muhammad… - Nano …, 2024 - search.proquest.com
This study investigates the influence of different annealing ambient on terbium oxide (Tb 4 O
7) passivation layers sputtered using radio frequency (RF) sputtering on silicon (Si) …

High pressure structural studies on rare-earth sesquioxides

PC Sahu, D Lonappan… - Journal of Physics …, 2012 - iopscience.iop.org
Abstract The Rare-Earth sesquioxides (RE 2 O 3) exhibit interesting physical and chemical
properties. Some of these oxides have tremendous technological applications. At ambient …

The impact of post-deposition annealing durations on the formation of Tb4O7 passivation layer on silicon substrate

AA Sifawa, SM Mohammad, A Muhammad… - Ceramics …, 2024 - Elsevier
In this study, we have effectively utilized radio frequency (RF) sputtering to sputter the Tb 4 O
7 passivation layer on an n-type silicon (Si) substrate in an argon (Ar) ambient. Various …

Effect of thermal treatment on the formation, textural and electrical conductivity properties of nanocrystalline Tb4O7

BM Abu-Zied, ARN Mohamed… - Journal of Nanoscience …, 2015 - ingentaconnect.com
Nanocrystalline Tb4O7 was fabricated by the calcination of its precursor, which was
prepared by the precipitation method using NaOH as a precipitant. The phase changes …

Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient

AA Sifawa, SM Mohammad, A Muhammad… - Journal of Materials …, 2024 - Springer
In this study, we have successfully used radio-frequency (RF) sputtering to sputter the
Tb4O7 passivation layers on silicon (Si) substrates. The impact of different RF powers and …

Evaluation on the optical properties of Ga2O3− x thin films co-doped with Tb3+ and transition metals (Mn2+, Cr3+) prepared by a photochemical route

G Cabello, L Lillo, C Caro, MA Soto-Arriaza… - Ceramics …, 2013 - Elsevier
Gallium β-diketonate complexes were studied as precursors for the photochemical
deposition of amorphous thin films of gallium oxide doped with terbium and co-doped with …