A review of SiC power module packaging technologies: Challenges, advances, and emerging issues

H Lee, V Smet, R Tummala - IEEE Journal of Emerging and …, 2019 - ieeexplore.ieee.org
Power module packaging technologies have been experiencing extensive changes as the
novel silicon carbide (SiC) power devices with superior performance become commercially …

[HTML][HTML] DC-DC converter topologies for electric vehicles, plug-in hybrid electric vehicles and fast charging stations: State of the art and future trends

S Chakraborty, HN Vu, MM Hasan, DD Tran… - Energies, 2019 - mdpi.com
This article reviews the design and evaluation of different DC-DC converter topologies for
Battery Electric Vehicles (BEVs) and Plug-in Hybrid Electric Vehicles (PHEVs). The design …

Survey of high-temperature reliability of power electronics packaging components

R Khazaka, L Mendizabal, D Henry… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
In order to take the full advantage of the high-temperature SiC and GaN operating devices,
package materials able to withstand high-temperature storage and large thermal cycles …

Mechanical properties of nano-silver joints as die attach materials

KS Siow - Journal of alloys and compounds, 2012 - Elsevier
This review traces the development of silver (Ag) as a die attach bonding material in the
microelectronic packaging industry from its' early days as micron-scale silver flakes to the …

Low-temperature low-pressure die attach with hybrid silver particle paste

K Suganuma, S Sakamoto, N Kagami, D Wakuda… - Microelectronics …, 2012 - Elsevier
New types of die attach pastes comprising micron-sized Ag particles hybridized with
submicron-sized Ag particles were considered as lead-free die attach materials for SiC …

Highly conductive Cu–Cu joint formation by low-temperature sintering of formic acid-treated Cu nanoparticles

J Liu, H Chen, H Ji, M Li - ACS applied materials & interfaces, 2016 - ACS Publications
Highly conductive Cu–Cu interconnections of SiC die with Ti/Ni/Cu metallization and direct
bonded copper substrate for high-power semiconductor devices are achieved by the low …

The effect of oxide, carbide, nitride and boride additives on properties of pressureless sintered SiC: A review

SHN Alhosseini, SR Mousavi - Journal of the European Ceramic Society, 2019 - Elsevier
Abstract Properties such as high hardness, low density, and high elastic modulus have
made SiC ceramics proper choices for a variety of industrial applications. However …

Low-pressure Cu-Cu bonding using in-situ surface-modified microscale Cu particles for power device packaging

X Liu, H Nishikawa - Scripta materialia, 2016 - Elsevier
An oxidation-reduction bonding (ORB) was applied to achieve Cu-Cu bonding with
microscale Cu particle paste. During sintering at 300° C, Cu 2 O nanoparticles were …

Online thermal resistance and reliability characteristic monitoring of power modules with Ag sinter joining and Pb, Pb-free solders during power cycling test by SiC …

D Kim, S Nagao, C Chen, N Wakasugi… - … on Power Electronics, 2020 - ieeexplore.ieee.org
Despite the rapid progression of silicon carbide (SiC) power devices, the thermal
characteristic evaluation during power cycling at high temperature (> 200° C) is an issue. In …

[HTML][HTML] Novel copper particle paste with self-reduction and self-protection characteristics for die attachment of power semiconductor under a nitrogen atmosphere

Y Gao, W Li, C Chen, H Zhang, J Jiu, CF Li, S Nagao… - Materials & Design, 2018 - Elsevier
A novel die-attach material, Cu particle paste with self-reduction and self-protection
characteristics, was designed by simply adding ascorbic acid (AA) into Cu paste. The self …