Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …

Today's generation of the technological world needs low-power application devices and low-
cost transistors. Recently researchers have developed a 3 nm MOSFET nanoelectronics …

In this article, a Technology Computer-Aided Design (TCAD)-based study has been done for
gallium oxide (Ga 2 O 3) gated UV phototransistor with face tunneling architecture and …

The investigation of TFET for analog and RF application thus far is least focused. This paper
presents an extensive investigation of TFET design space parameters on analog …

This paper introduces a novel GaAs/GaSb polarity-controlled tunnel field-effect transistor
(GaAs/GaSb PC-TFET)-based biosensor with high sensitivity for label-free biomolecule …

This article presents a new line tunneling dominating metal–semiconductor contact-induced
SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a …

This paper proposes a novel Z-shaped gate TFET (ZG-TFET) to enhance the device
switching characteristics. The gate terminal is elevated above the N+ pocket region to …

As the critical building block of the ternary system, massive research in recent years has
mainly been focused on the ternary inverter. Particularly, the tunnel FET (TFET)-based …

In this article, we present a novel heterostructure tunnel field-effect transistor (HSC-TFET)
with a Schottky contact drain, utilizing a gate over a substantial portion of the source metal …

Analytical models of low-frequency noise (LFN) characteristics for planar-type tunnel field-
effect-transistors (TFETs) are proposed. A surface-potential-based current-voltage model is …