Electrochemical Growth and Structural Study of the AlxGa1−xAs Nanowhisker Layer on the GaAs Surface
This work presents a novel, cost-effective method for synthesizing AlxGa1− xAs
nanowhiskers on a GaAs surface by electrochemical deposition. The process begins with …
nanowhiskers on a GaAs surface by electrochemical deposition. The process begins with …
Wet Chemical Synthesis of AlxGa1− xAs Nanostructures: Investigation of Properties and Growth Mechanisms
This study focuses on the wet chemical synthesis of AlxGa1− xAs nanostructures,
highlighting how different deposition conditions affect the film morphology and material …
highlighting how different deposition conditions affect the film morphology and material …
Formation mechanism of chained and crystallographically oriented pores on n-InP surfaces
This article presents a study of the mechanism of porous space formation on the surface of
single-crystal indium phosphide. The dissolution features of crystals of various types of …
single-crystal indium phosphide. The dissolution features of crystals of various types of …
Formation of oxide islands on the p-type gallium arsenide surface by electrochemical etching
S Kovachov, Y Suchikova… - 2023 IEEE International …, 2023 - ieeexplore.ieee.org
This paper investigates the electrochemical dissolution processes of Gallium Arsenide
(GaAs) in an HF: C 2 H 5 OH electrolyte mixture. We elucidate the mechanism of oxide …
(GaAs) in an HF: C 2 H 5 OH electrolyte mixture. We elucidate the mechanism of oxide …