A review of advances in the growth of SiC epitaxial films on silicon is presented. All the main
classical methods used at present to grow SiC films on silicon are described. Their …

The paper focuses on growth of GaN thin films via plasma assisted molecular beam epitaxy
on SiC/Si (111) substrate formed by atom-by-atom substitution method. A comparison with …

The mechanisms of nucleation and growth of GaN films on porous silicon substrates with a
buffer layer of silicon carbide grown by new method of substitution of atoms directly in the …

The mechanisms of growth of silicon carbide (SiC) films by the method of substitution of
atoms on macro-and mesoporous silicon substrates (Si) of p-and n-type conduction are …

The review provides a short list of the latest scientific achievements of the Laboratory of
Structural and Phase Transformations in Condensed Matter, Institute for Problems in …

Formation of ohmic contacts to GaN is of high practical importance for device fabrication.
Due to the wide band gap, formation of multilayer metal structures is required to make …

The introduction to this chapter provides a brief overview of recent Raman imaging studies
of various SiC structures. These include bulk crystals, layers, composites and fibers, as well …

Results on structural, compositional, optical and electrical characterization of MOVPE grown
AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis …

Приведен обзор достижений в области роста эпитаксиальных пленок SiC на Si.
Описаны все основные классические методы выращивания пленок на SiC на Si …