Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

Metallic nanoparticles supporting a localized surface plasmon resonance have emerged as
promising platforms for nanoscopic labels, sensors, and (photo-) catalysts. To use …

Group III nitride based two-dimensional multi-quantum well (MQW) nanostructures find
remarkable applications in the visible to ultraviolet light sources. The interface optical (IFO) …

Till now the nanoscale focusing and imaging in the sub‐diffraction limit is achieved mainly
with the help of plasmonic field enhancement by confining the light assisted with noble metal …

The near-field scanning optical microscopic (NSOM) imaging of Au nanoparticles with size
in the sub-wavelength limit (< wavelength/2N. A.) is reported. The NSOM imaging technique …

Conventional optical microscopy is limited by the abbe's diffraction limit. In other words, the
spatial resolution achieved by the optical system is greater than or equal to λ/2, where λ is …

The present chapter includes a brief report of the experimental techniques used for the
synthesis of AlGaN NWs and their characterizations to investigate the morphological …