Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
The insertion of an InGaN underlayer (UL) is known to strongly improve the performance of
InGaN/GaN quantum well (QW) based blue light emitting diodes (LEDs). However, the …
InGaN/GaN quantum well (QW) based blue light emitting diodes (LEDs). However, the …
The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
The development of efficient green light-emitting diodes (LEDs) is of paramount importance
for the realization of colour-mixing white LEDs with a high luminous efficiency. While the …
for the realization of colour-mixing white LEDs with a high luminous efficiency. While the …
[HTML][HTML] Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers
AM Armstrong, BN Bryant, MH Crawford… - Journal of Applied …, 2015 - pubs.aip.org
The influence of a dilute In x Ga 1-x N (x∼ 0.03) underlayer (UL) grown below a single In
0.16 Ga 0.84 N quantum well (SQW), within a light-emitting diode (LED), on the radiative …
0.16 Ga 0.84 N quantum well (SQW), within a light-emitting diode (LED), on the radiative …
Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells
JJ Wierer, DD Koleske, SR Lee - Applied Physics Letters, 2012 - pubs.aip.org
The performance of InGaN/GaN multiple quantum well (MQW) solar cells containing 15
periods of 2.7 nm thick In 0.21 Ga 0.79 N wells and three different GaN barriers thicknesses …
periods of 2.7 nm thick In 0.21 Ga 0.79 N wells and three different GaN barriers thicknesses …
Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy
Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light
emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN …
emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN …
Carrier localization in the vicinity of dislocations in InGaN
We present a multi-microscopy study of dislocations in InGaN, whereby the same threading
dislocation was observed under several microscopes (atomic force microscopy, scanning …
dislocation was observed under several microscopes (atomic force microscopy, scanning …
InAlN underlayer for near ultraviolet InGaN based light emitting diodes
We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light
emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it …
emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it …
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
In this paper, we report on the effects of including Si-doped (In) GaN prelayers on the low
temperature optical properties of a blue-light emitting InGaN/GaN single quantum well. We …
temperature optical properties of a blue-light emitting InGaN/GaN single quantum well. We …
A study of the inclusion of prelayers in InGaN/GaN single‐and multiple‐quantum‐well structures
We report on the effects on the optical properties of blue‐light emitting InGaN/GaN single‐
and multiple‐quantum‐well structures including a variety of prelayers. For each single …
and multiple‐quantum‐well structures including a variety of prelayers. For each single …
Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon
X Zhao, K Huang, J Bruckbauer, S Shen, C Zhu… - Scientific Reports, 2020 - nature.com
It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN
superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of …
superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of …