Two-Dimensional Materials for Brain-Inspired Computing Hardware

S Hadke, MA Kang, VK Sangwan… - Chemical Reviews, 2025 - ACS Publications
Recent breakthroughs in brain-inspired computing promise to address a wide range of
problems from security to healthcare. However, the current strategy of implementing artificial …

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

W Wang, W Wang, Y Meng, Q Quan, Z Lai, D Li, P Xie… - ACS …, 2022 - ACS Publications
The incapability of modulating the photoresponse of assembled heterostructure devices has
remained a challenge for the development of optoelectronics with multifunctionality. Here, a …

Reconfigurable mixed-kernel heterojunction transistors for personalized support vector machine classification

X Yan, JH Qian, J Ma, A Zhang, SE Liu, MP Bland… - Nature …, 2023 - nature.com
Advances in algorithms and low-power computing hardware imply that machine learning is
of potential use in off-grid medical data classification and diagnosis applications such as …

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

J Weinbub, R Kosik - Journal of Physics: Condensed Matter, 2022 - iopscience.iop.org
Quantum electronics has significantly evolved over the last decades. Where initially the clear
focus was on light–matter interactions, nowadays approaches based on the electron's wave …

Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p–n Junctions

Y Lv, CY Wu, Y Zhao, G Wu, M Abid, J Cho… - ACS Applied …, 2022 - ACS Publications
Anti-ambipolar behavior has been observed in multilayer two-dimensional semiconductors
and many p–n junctions. However, temperatures in the range of tens of kelvin are usually …

Unified compact model for thin-film heterojunction anti-ambipolar transistors

H Yoo, CH Kim - IEEE Electron Device Letters, 2021 - ieeexplore.ieee.org
This letter proposes an advanced compact model for anti-ambipolar transistors based on a
lateral thin-film material heterojunction. The modeling idea focuses on an analytical …

Gate‐Modulated Polarity Transition and Polarization‐Sensitive Photodetection Enabled by Sandwiching Anisotropic GeSe in vdW Heterojunction

M Jiang, T Zheng, J Zhang, Z Li, Q Deng… - Advanced Optical …, 2024 - Wiley Online Library
The ability to modulate the polarity of carrier transport and photo‐response in assembled
heterostructure devices remains a huge challenge for the development of multifunctional …

Reversible charge-polarity control for a photo-triggered anti-ambipolar In 2 Se 3 &WSe 2 heterotransistor

S Huang, H Chen, S Wang, Y Chen, J He, W Wang… - Nanoscale, 2023 - pubs.rsc.org
Based on the charge-polarity control, a novel anti-ambipolar heterotransistor is proposed
based on a special In2Se3&WSe2 van der Waals heterostructure. Unlike traditional logic …

Configurable anti-ambipolar photoresponses for optoelectronic multi-valued logic gates

X Cui, S Kim, F Ahmed, M Du, AC Liapis… - Applied Physics …, 2024 - pubs.aip.org
Anti-ambipolar transistors (AATs) are the leading platform for the paradigm shift from binary
to multi-valued logic (MVL) circuits, increasing circuit integration density and data …

Band Structure Engineering of WSe2 Homo‐Junction Interfaces via Thickness Control

JC Shin, YH Kim, K Watanabe… - Advanced Materials …, 2022 - Wiley Online Library
Transition metal dichalcogenides (TMDs), one of the 2D semiconductors, such as
molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), exhibit novel physical and …