[HTML][HTML] Review of conventional and advanced non-destructive testing techniques for detection and characterization of small-scale defects
Inspection reliability of small-scale defects, targeting dimensions below 100 µm, is crucial for
structural safety of critical components in high-value applications. Early defects are often …
structural safety of critical components in high-value applications. Early defects are often …
Quantum dots and their applications: what lies ahead?
MA Cotta - ACS applied nano materials, 2020 - ACS Publications
It has been many years since the first works on the reduced dimensionality of
semiconductors, which led to the concept of “artificial atoms”, or quantum dots (QDs). 1, 2 …
semiconductors, which led to the concept of “artificial atoms”, or quantum dots (QDs). 1, 2 …
A comprehensive analysis of strain profile in the heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) quantum dot heterostructures
In this study, we demonstrate a detailed strain analysis of the heterogeneously coupled
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …
InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property
The refinement of interface structure in InGaAs/AlGaAs multiple quantum wells (MQWs)
through molecular beam epitaxy (MBE) is crucial for enhancing their luminescence …
through molecular beam epitaxy (MBE) is crucial for enhancing their luminescence …
Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and …
The size and shape of self-assembled quantum dots (QDs) in the top layer of a strain-
coupled multilayer Stranski-Krastanov (SK) type QD heterostructure is decided by the effect …
coupled multilayer Stranski-Krastanov (SK) type QD heterostructure is decided by the effect …
Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots
This paper investigates the effect of GaAsBi strain reduction layers (SRLs) on InAs QDs with
different Bi fluxes to achieve nanostructures with improved temperature stability. The SRLs …
different Bi fluxes to achieve nanostructures with improved temperature stability. The SRLs …
In-Situ Tailoring of Vertically Coupled InAs pip Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga …
The authors report a detailed analysis of an epitaxial growth technique for indium arsenide
(InAs) Quantum-dot infrared photodetectors circumvent the detrimental effects arising from …
(InAs) Quantum-dot infrared photodetectors circumvent the detrimental effects arising from …
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
Optical and structural properties in high-x In x Ga 1-x As (x> 0.65) samples with varying
indium concentration grown on InP (1 0 0) substrate are reported. By increasing the indium …
indium concentration grown on InP (1 0 0) substrate are reported. By increasing the indium …
Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation
Epitaxial growth of III-V heterostructures on non-native substrates such as Silicon (Si) or
Germanium (Ge) is one of the promising research topics for the last two decades. The …
Germanium (Ge) is one of the promising research topics for the last two decades. The …
Optimization of vertical strain coupling in InAs/GaAs pip quantum dot infrared photodetectors with applied growth strategy
The authors report the optimization of vertically coupled active layers of InAs quantum dots
(QDs) grown epitaxially following a unique in-situ growth strategy to achieve controlled …
(QDs) grown epitaxially following a unique in-situ growth strategy to achieve controlled …