Photoexcited electron lifetimes influenced by momentum dispersion in silicon nanowires
Silicon nanowires (SiNWs) exhibit unique optoelectronic properties originating from one-
dimensional confinement effect. Technologically relevant properties—including band gap …
dimensional confinement effect. Technologically relevant properties—including band gap …
Magnetic-field-driven electron dynamics in graphene
Graphene exhibits unique optoelectronic properties originating from the band structure at
the Dirac points. It is an ideal model structure to study the electronic and optical properties …
the Dirac points. It is an ideal model structure to study the electronic and optical properties …
Study of iridium silicide monolayers using density functional theory
MD Popis, SV Popis, N Oncel, MR Hoffmann… - Journal of Applied …, 2018 - pubs.aip.org
In this study, we investigated physical and electronic properties of possible two-dimensional
structures formed by Si (silicon) and Ir (iridium). To this end, different plausible structures …
structures formed by Si (silicon) and Ir (iridium). To this end, different plausible structures …
Free-standing Pt and Pd nanowires: Strain-modulated stability and magnetic and thermoelectric properties
We studied the Lagrangian strain-induced colossal magnetism and thermoelectric
performance of platinum (Pt) and palladium (Pd) nanowires (NWs) using first-principles …
performance of platinum (Pt) and palladium (Pd) nanowires (NWs) using first-principles …
First-Principles Study of Charge Carrier Dynamics with Explicit Treatment of Momentum Dispersion on Si Nanowires along< 211> crystallographic Directions
The ground state structure, optical properties and charge carrier dynamics of silicon
nanowire (SiNW) grown in< 211> crystallographic direction is studied as a function of …
nanowire (SiNW) grown in< 211> crystallographic direction is studied as a function of …
More Than a Device: Function Implementation in a Multi-Gate Junctionless FET Structure
The miniaturization of the transistor sizes to keep up with Moore's Law in Integrated Circuits
(ICs) is rapidly approaching the physical limits. To push the horizons of Moore's Law, among …
(ICs) is rapidly approaching the physical limits. To push the horizons of Moore's Law, among …
[图书][B] Function Implementation in a Multi-Gate Junctionless FET Structure
S Hossain - 2023 - search.proquest.com
This dissertation explores designing and implementing a multi-gate junctionless field-effect
transistor (JLFET) structure and its potential applications beyond conventional devices. The …
transistor (JLFET) structure and its potential applications beyond conventional devices. The …
Growth and phase transformations of Ir on Ge (111)
CH Mullet, BH Stenger, AM Durand, JA Morad, Y Sato… - Surface Science, 2017 - Elsevier
The growth of Ir on Ge (111) as a function of temperature between 23° C and 820° C is
characterized with low energy electron microscopy (LEEM), low energy electron diffraction …
characterized with low energy electron microscopy (LEEM), low energy electron diffraction …
Time-resolved Optical Properties of SiNW Oriented in< 211> Crystallographic Direction
Silicon nanowires (SiNWs) show unique optoelectronic properties such as band gap,
radiative and nonradiative relaxations. In this research, the optoelectronic properties of< …
radiative and nonradiative relaxations. In this research, the optoelectronic properties of< …
[PDF][PDF] Work Function Tuning for Junctionless Transistor High-K Gate Material Using Machine Learning Descriptor Engineering
S Hossain, AF Rabbi - avestia.com
A new material descriptor to predict the work function of the high-k gate material of a
junctionless transistor. This descriptor model is focused on vectorizing property metrics and …
junctionless transistor. This descriptor model is focused on vectorizing property metrics and …