Carbon nanotube synthesis using flame has enormous potential for large scale carbon
nanotubes production. Carbon-rich and autothermal conditions within the flame environment …

Sol–gel-based amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs)
have gained widespread attention due to their simple process and low cost. Herein, a-IGZO …

This letter demonstrates a high-mobility amorphous indium-gallium-zinc oxide (a-IGZO) thin-
film transistor (TFT) with aluminum oxide (Al 2 O 3) passivation layer by radio frequency (RF) …

In this letter, we propose a strategy to improve the electrical performance of amorphous In-
Ga-Zn-O (a-IGZO) thin film transistor (TFT) with the copper (Cu) electrodes by depositing a …

Self-aligned structured oxide thin-film transistors (TFTs) are appropriate candidates for use
in the backplanes of high-end displays. Although SiNx is an appropriate candidate for use in …

In this work, the specific contact resistance (ρ c) between amorphous indium-gallium-zinc-
oxide (IGZO) semiconductor and different contact electrodes was obtained from thin film …

CaSCN─ agarose biopolymer electrolytes were prepared by infusing various amounts of
CaSCN salts (0–40 wt.%) in 0.5 g of agarose. CaSCN─ agarose biopolymer electrolytes …

Printing technologies for thin-film transistors (TFTs) have recently attracted much interest
owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing …

In this study, high-performance ternary Cu-0.13 wt% Cr-0.04 wt% Zr (Cu–Cr–Zr) alloy films
on flexible polyimide (PI) substrate were investigated for the metallization of flexible thin-film …

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO)
thin-film transistor (TFT) based on alumina oxide (Al 2 O 3) passivation layer (PVL) and …