Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …

Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …

Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

GeSn alloys are the subject of intense research activities as these group IV semiconductors
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …

Strain and band gap engineered epitaxial germanium (ε-Ge) quantum-well (QW) laser
structures were investigated on GaAs substrates theoretically and experimentally for the first …

Group IV Ge1–x Sn x semiconductors hold the premise of enabling broadband silicon-
integrated infrared optoelectronics due to their tunable band gap energy and directness …

GeSn alloys offer a promising route towards a CMOS compatible light source and the
realization of electronic-photonic integrated circuits. One tactic to improve the lasing …

Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research
efforts for the realization of electrically pumped group IV lasers monolithically integrated on …