A review is given of the applications of ion implantation in III–V compound semiconductor
device technology, beginning with the fundamentals of ion stopping in these materials and …

In this review, the important parameters that affect the electrical characteristics of ion
implanted layers in compound semiconductors are discussed. Applications of this …

Disturbances in the stoichiometry of compound semiconductors which result from ion
implantation are calculated using a Boltzmann transport equation approach. Results for 50 …

Raman scattering, electron diffraction, and dark‐conductivity measurements have been
made on so‐called a‐Si films deposited at various rf powers by a glow‐discharge technique …

Ion beam induced damaging and amorphization of crystalline InP is investigated. 100 keV
B+, 300 keV Si+, 200 keV Ar+ and 600 keV Se+ ions are implanted into< 100> InP at …

The sample temperature during ion implantation in InP has a pronounced effect on the
electrical characteristics of the resulting layers. For the heavy ions, Se (donor) and Cd …

Si ion‐implantation damage in InP was studied by channeling measurements with 1‐MeV4
He ions. 200‐keV Si ions were implanted at fluences ranging from 1013 to 5× 1014/cm2. A …

A study of the electrical characteristics of InP implanted with C, Si, Ge and Sn demonstrates
that all of these column IV elements are donors, although the net electrical activation …

The use of chemical‐beam expitaxy instead of chemical vapor deposition allows the
incorporation of thermal atomic beams for doping. Dopant profile measurements by a …

Diode lasers with an intracavity electroabsorption modulator have been fabricated in the
GaInAsP/InP material system. The additional absorption loss produced by operating the …