The start-up value of an SRAM cell is unique, random, and unclonable as it is determined by
the inherent process mismatch between transistors. These properties make SRAM an …

Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI)
are critical circuit reliability issues in highly scaled CMOS technologies. In this paper, we …

We study the security feature of static random access memory (SRAM) against the data
imprinting attack and provide a solution to protect the SRAM from this attack. There are four …

Asymmetric BTI aging in circuit paths has shown to cause a time dependent shift in the
signal's duty cycle, affecting the performance of circuits such as low power SRAMs whose …

SRAM stability is a major concern in nanometer CMOS technologies. As the most important
metrics of SRAM static stability, the static characteristics of SRAM are derived by static …

We develop a method to estimate lifetime performance, yield, and power for Static Random-
Access Memories (SRAMs) that captures the combination of process variations and aging …

Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability
(PBTI) are critical circuit reliability issues in highly scaled CMOS technologies. In this paper …

Transistor random threshold voltage variations due to process fluctuations seriously affects
the stability of Static Random Access Memory (SRAM). In this paper, a SRAM bit transistors …

The rate of aging of ICs is increasing with the continued reduction in feature sizes of devices.
Bias temperature instability (BTI) is considered to be the major reliability hazard in nano …

This paper reviews recent advances in in-situ and in-field techniques for monitoring and
compensating aging in digital integrated circuits. For pipelines, we introduce an approach …