Significant research effort has been placed into the use of III–V compound semiconductors,
including InGaAs as channel materials in CMOS logic devices due to their superior electron …

We grew and characterized Zn-and Si-doped In 0.48 Ga 0.52 P grown on (0 0 1) GaAs
substrates misoriented by θ S= 0°, 2°, 6°, and 10° toward (1 1 1) A using metal-organic …

This Memorandum for the Chairman of the Joint Chiefs of Staff is open analysis of the major
outcomes and implications emerging from the United States Army War College s 25th …

In 0.53 Ga 0.47 As, a III–V compound semiconductor with high electron mobility, is expected
to bring better performance than silicon in next-generation n-type MOSFET devices …

We present growth and characterization studies of highly n-doped InGaAs epilayers on InP
substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum …

A method to achieve realistic values for the thermal expansion coefficient in atomistic
simulations of III–V materials using empirical Tersoff potentials is reported. The acceptance …

We expose the predominant diffusional pathways for In and As in InAs, as well as dopant Si
atoms in InAs, using Nudged Elastic Band calculations in conjunction with accurate Density …

Integrating III-V semiconductors into next-generation silicon-based transistors is a promising
alternative being considered as a route to faster and more energy-efficient electronic …

Point defects are inevitable, at least due to thermodynamics, and essential for engineering
semiconductors. Herein, we investigate the formation and electronic structures of fifteen …

The work presents doping characteristics and properties of high Si− doped InGaAs epilayers
lattice− matched to InP grown by low pressure metal− organic vapour phase epitaxy. Silane …