Precursors as enablers of ALD technology: Contributions from University of Helsinki
T Hatanpää, M Ritala, M Leskelä - Coordination Chemistry Reviews, 2013 - Elsevier
The review focuses on ALD precursors of selected elements such as alkaline earth (Mg, Ca,
Sr, Ba), group 4 metals, bismuth, silver, iridium, selenium, tellurium and antimony. These …
Sr, Ba), group 4 metals, bismuth, silver, iridium, selenium, tellurium and antimony. These …
Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review
In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …
[HTML][HTML] Process–property relationship in high-k ALD SrTiO 3 and BaTiO 3: a review
Perovskites exhibit a wide range of remarkable material properties that have the potential to
advance various scientific fields. These properties originate in their unique structure and …
advance various scientific fields. These properties originate in their unique structure and …
Exploring the Pb1−xSrxHfO3 System and Potential for High Capacitive Energy Storage Density and Efficiency
The hafnate perovskites PbHfO3 (antiferroelectric) and SrHfO3 (“potential” ferroelectric) are
studied as epitaxial thin films on SrTiO3 (001) substrates with the added opportunity of …
studied as epitaxial thin films on SrTiO3 (001) substrates with the added opportunity of …
[HTML][HTML] Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors
Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide
thin films with nanoscale thickness control. Most successful industrial applications have …
thin films with nanoscale thickness control. Most successful industrial applications have …
Structural and physical properties of Sr‐based 3d–5d double perovskites of Sr2Fe0.5Hf1.5O6−δ oxides
Q Tang, X Zhu - Journal of the American Ceramic Society, 2023 - Wiley Online Library
Abstract Sr‐based 3d–5d double perovskite Sr2Fe0. 5Hf1. 5O6− δ (SFHO) oxide powders
were synthesized via the solid‐state reaction method, and their structural, dielectric …
were synthesized via the solid‐state reaction method, and their structural, dielectric …
[HTML][HTML] Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications
The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential
high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by …
high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by …
Achieving atomistic control in materials processing by plasma–surface interactions
The continuous down-scaling of electronic devices and the introduction of functionally
improved novel materials require a greater atomic level controllability in the synthesis and …
improved novel materials require a greater atomic level controllability in the synthesis and …
Low Leakage in High‐k Perovskite Gate Oxide SrHfO3
Reducing the leakage current through the gate oxide is becoming increasingly important for
power consumption reduction as well as reliability in integrated circuits as the …
power consumption reduction as well as reliability in integrated circuits as the …
Cubic to pseudo-cubic tetragonal phase transformation with Mg, Ca, and Be doping and its impact on optoelectronic, elastic and mechanical properties of SrHfO3
The structural, optoelectronic, elastic and mechanical properties of pure, Ca-, Mg-, and Be-
doped SrHfO 3 have been computed with CASTEP code based on density functional theory …
doped SrHfO 3 have been computed with CASTEP code based on density functional theory …