The paper details the optimization of efficiency parameters for a InGaN TQW laser diode
using the particle swarm optimization algorithm through SILVACO software. By adjusting …

The performance characteristics of deep violet In0. 082Ga0. 918N/GaN multi-quantum-well
(MQW) laser diodes (LDs) with step-graded electron blocking layers (EBLs), a new EBL …

The performance characteristics of deep violet In 0.082 Ga 0.918 N/GaN double quantum
well (DQW) laser diodes (LDs) with different electron blocking layer (EBL) including a …

The effect of the indium (In) composition of In x Ga 1− x N (GaN) waveguide layers on the
performance of deep violet In 0.082 Ga 0.918 N/GaN double quantum well (DQW) laser …

A thin aluminum gallium nitride (AlGaN) electron blocking layer (EBL), above the active
region, is used to improve the performance and reduce threshold current of indium gallium …

Abstract InGaN/GaN multilayer barriers (MLBs) have been theoretically and experimentally
applied to improve InGaN-based light-emitting diodes (LEDs). In this study, the effects of …

The performance characteristics of deep violet indium gallium nitride (InGaN) multiquantum
well (MQW) laser diodes (LDs) with an emission wavelength of around 390 nm have been …

The effect of number of quantum wells and quantum well thickness on the optical
performance of InGaN vertical cavity surface emitting laser (VCSEL) was numerically …

In this study, three kinds of electron-blocking layer (EBL) in blue InGaN light-emitting diodes
(LEDs) are investigated numerically. They are conventional AlGaN EBL, AlInGaN EBL and …

The effect of the laser ridge width on the performance characteristics of deep violet In 0.082
Ga 0.918 N/GaN double quantum well (DQW) laser diodes (LDs) has been numerically …