Light absorption and filtering properties of vertically oriented semiconductor nano wires

SEO Kwanyong, M Wober, P Steinvurzel… - US Patent …, 2015 - Google Patents
(57) ABSTRACT A nanowire array is described herein. The nanowire array comprises a
substrate and a plurality of nanowires extending essentially vertically from the substrate; …

Microelectronic elements having metallic pads overlying vias

V Oganesian, I Mohammed, C Mitchell, B Haba… - US Patent …, 2014 - Google Patents
(56) References Cited 2004/0043607 A1 3/2004 Farnworth et al. 2004/0051173 A1 3, 2004
Koh et al. US PATENT DOCUMENTS 2004/006 1238 A1 4/2004 Sekine 2004/0104454 A1 …

Microelectronic elements with rear contacts connected with via first or via middle structures

V Oganesian, B Haba, I Mohammed, C Mitchell… - US Patent …, 2014 - Google Patents
(57) ABSTRACT A microelectronic unit includes a microelectronic element, eg, an integrated
circuit chip, having a semiconductor region of monocrystalline form. The semiconductor …

Uniform color filter arrays in a moat

UC Boettiger - US Patent 7,675,080, 2010 - Google Patents
A method and apparatus for improving the planarity of a recessed color filter array when the
recessed region or trench depth exceeds the thickness of the color filter film. The method …

Chips having rear contacts connected by through vias to front contacts

B Haba, KA Honer, DB Tuckerman… - US Patent …, 2013 - Google Patents
US8405196B2 - Chips having rear contacts connected by through vias to front contacts -
Google Patents US8405196B2 - Chips having rear contacts connected by through vias to …

Imaging devices having arrays of image sensors and precision offset lenses

D Bakin - US Patent App. 13/187,237, 2012 - Google Patents
BACKGROUND 0002. This relates generally to imaging devices, and more particularly, to
imaging devices with multiple lenses and image sensors. 0003 Image sensors are …

Passivated upstanding nanostructures and methods of making the same

YJ Yu, M Wober - US Patent 9,082,673, 2015 - Google Patents
Described herein is a device comprising: a Substrate; one or more of a nanostructure
extending essentially perpendicu larly from the substrate; wherein the nanostructure …

Phase change material switch and method of making the same

P Borodulin, NAM El-Hinnawy, RM Young… - US Patent …, 2016 - Google Patents
A phase change material (PCM) switch is disclosed that includes a resistive heater element,
and a PCM element proximate the resistive heater element. A thermally conductive electrical …

Wafer level packages for rear-face illuminated solid state image sensors

RDW Crisp, B Haba, V Oganesian - US Patent App. 12/393,233, 2009 - Google Patents
A solid state image sensor includes a microelectronic element having a front face and a rear
face remote from the front face, the rear face having a recess extending towards the front …

Backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors

A Lahav, A Fenigstein, A Strum, S Rizzolo - High Performance Silicon …, 2020 - Elsevier
This chapter reviews modern manufacturing techniques for backside illuminated (BSI)
CMOS image sensors (CISs). It presents a thorough discussion regarding the advantages …