Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
[HTML][HTML] High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
We demonstrate Si-implanted AlN with high conductivity (> 1 Ω− 1 cm− 1) and high carrier
concentration (5× 10 18 cm− 3). This was enabled by Si implantation into AlN with a low …
concentration (5× 10 18 cm− 3). This was enabled by Si implantation into AlN with a low …
Band alignment at β-(AlxGa1− x) 2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition
R Wakabayashi, M Hattori, K Yoshimatsu… - Applied Physics …, 2018 - pubs.aip.org
High-quality β-(Al x Ga 1− x) 2 O 3 (x= 0–0.37) films were epitaxially grown on β-Ga 2 O 3
(100) substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate …
(100) substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate …
Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation
Solid-state self-powered UV detection is strongly required in various application fields to
enable long-term operation. However, this requirement is incompatible with conventionally …
enable long-term operation. However, this requirement is incompatible with conventionally …
[HTML][HTML] Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
A theoretical framework for a general approach to reduce point defect density in materials
via control of defect quasi Fermi level (dQFL) is presented. The control of dQFL is achieved …
via control of defect quasi Fermi level (dQFL) is presented. The control of dQFL is achieved …
6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation
Optically pumped lasing from AlGaN/AlN multiple quantum wells grown on single-crystalline
AlN substrates with lasing thresholds as low as 6 kW/cm 2 is demonstrated via the reduction …
AlN substrates with lasing thresholds as low as 6 kW/cm 2 is demonstrated via the reduction …
Demonstration of N-polar III-nitride tunnel junction LED
Y Zhang, G Deng, Y Yu, Y Wang, D Zhao, Z Shi… - Acs …, 2020 - ACS Publications
In this study, we have demonstrated an N-polar III-nitride tunnel junction (TJ) light-emitting
diode (LED). The LED was grown on an N-polar GaN template on sapphire substrates by …
diode (LED). The LED was grown on an N-polar GaN template on sapphire substrates by …
[HTML][HTML] Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition
Crack-free AlN films with threading dislocation density (TDD) below 10 9 cm− 2 are needed
for deep-UV optoelectronics. This is typically achieved using pulsed lateral overgrowth or …
for deep-UV optoelectronics. This is typically achieved using pulsed lateral overgrowth or …
[HTML][HTML] Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates
Polarization-induced carriers play an important role in achieving high electrical conductivity
in ultrawide bandgap semiconductor AlGaN, which is essential for various applications …
in ultrawide bandgap semiconductor AlGaN, which is essential for various applications …
Over 600 V lateral AlN-on-AlN Schottky barrier diodes with ultra-low ideality factor
This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-
crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of …
crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of …