High Current Density in Monolayer MoS2 Doped by AlOx

CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi… - ACS …, 2021 - ACS Publications
Semiconductors require stable doping for applications in transistors, optoelectronics, and
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Method of constructing a semiconductor device and structure

Z Or-Bach, DC Sekar, B Cronquist, I Beinglass… - US Patent …, 2012 - Google Patents
2011-12-06 Assigned to MONOLITHIC 3D INC. reassignment MONOLITHIC 3D INC.
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Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources

Z Zhang, F Pagette, C D'emic, B Yang… - IEEE Electron …, 2010 - ieeexplore.ieee.org
An extremely low contact resistivity of 6-7*10^-9\Omega⋅cm^2 between Ni_0.9Pt_0.1Si and
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Multilevel semiconductor device and structure with memory

Z Or-Bach, JW Han - US Patent 10,515,981, 2019 - Google Patents
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Method of forming three dimensional integrated circuit devices using layer transfer technique

Z Or-Bach, D Sekar, B Cronquist, Z Wurman - US Patent 8,642,416, 2014 - Google Patents
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Semiconductor device and structure

Z Or-Bach, B Cronquist, I Beinglass, JL De Jong… - US Patent …, 2013 - Google Patents
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Semiconductor device and structure

Z Or-Bach, B Cronquist, I Beinglass, JL De Jong… - US Patent …, 2013 - Google Patents
2011-03-25 Assigned to MONOLITHIC 3D INC. reassignment MONOLITHIC 3D INC.
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

Method for fabrication of a semiconductor device and structure

Z Or-Bach, DC Sekar, B Cronquist - US Patent 8,557,632, 2013 - Google Patents
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Semiconductor device and structure

Z Or-Bach, B Cronquist, I Beinglass, JL De Jong… - US Patent …, 2013 - Google Patents
2010-12-03 Assigned to NuPGA Corporation reassignment NuPGA Corporation
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

Semiconductor system and device

Z Or-Bach, D Sekar, B Cronquist, Z Wurman - US Patent 9,219,005, 2015 - Google Patents
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