Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges
H Li, J Su, R Wang, Z Liu, M Xu - Micromachines, 2023 - mdpi.com
This review presents a concise overview of RF (radio frequency) power transistor behavior
models, which is crucial for optimizing RF performance in high-frequency applications like …
models, which is crucial for optimizing RF performance in high-frequency applications like …
A broadband PA design based on Bayesian optimization augmented by dynamic feasible region shrinkage
In this letter, a new Bayesian optimization (BO) method with dynamic feasible region
shrinkage (DFRS) technique for power amplifier (PA) design is proposed. As a powerful …
shrinkage (DFRS) technique for power amplifier (PA) design is proposed. As a powerful …
Trapping dynamics in GaN HEMTs for millimeter-wave applications: Measurement-based characterization and technology comparison
Charge trapping effects represent a major challenge in the performance evaluation and the
measurement-based compact modeling of modern short-gate-length (ie,≤ 0.15 μm) Gallium …
measurement-based compact modeling of modern short-gate-length (ie,≤ 0.15 μm) Gallium …
A GaN-HEMT active drain-pumped mixer for S-band FMCW radar front-end applications
This paper reports for the first time a drain-pumped (DP) mixer using Gallium Nitride (GaN)
HEMT technology. Specifically, it describes a method aimed to predict the optimum bias …
HEMT technology. Specifically, it describes a method aimed to predict the optimum bias …
C-band 30 W high PAE power amplifier MMIC with second harmonic suppression for radar network application
F Yang, L Song, Y Xu - Micromachines, 2022 - mdpi.com
In order to meet the application requirements of radar networks for high efficiency and high
second harmonic suppression (SHS) of power amplifiers, this paper proposes a C-band 30 …
second harmonic suppression (SHS) of power amplifiers, this paper proposes a C-band 30 …
Automatic extraction of measurement-based large-signal FET models by nonlinear function sampling
TM Martín-Guerrero, A Santarelli… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
A new method is proposed for the accurate experimental characterization and fully
automated extraction of compact nonlinear models for field-effect transistors (FETs). The …
automated extraction of compact nonlinear models for field-effect transistors (FETs). The …
Microwave characterization of trapping effects in 100-nm GaN-on-Si HEMT technology
Trapping effects of a state-of-the-art 100-nm GaN-on-Si high-electron mobility transistor
(HEMT) process for radio-frequency (RF) applications are characterized for the first time …
(HEMT) process for radio-frequency (RF) applications are characterized for the first time …
Rf gan-hemt technology evaluation framework based on drain current transient measurements
A comprehensive framework is proposed for the extraction of RF GaN HEMT trap-related
parameters (gate/drain lag, thermal resistance, trap activation energy, cross-section, and …
parameters (gate/drain lag, thermal resistance, trap activation energy, cross-section, and …
[HTML][HTML] Investigating the Bounds of Quality Factor for Class-E Series-Tuned RF Power Amplifiers and Their Computer-Aided Optimization
This paper presents a comprehensive analysis of Class-E series-tuned radio-frequency
power amplifiers (RFPAs), focusing on their design and optimization for high efficiency and …
power amplifiers (RFPAs), focusing on their design and optimization for high efficiency and …
Linearization of a 500-W L-band GaN Doherty power amplifier by dual-pulse trap characterization
This paper describes the linearization of a base-station L-band 500-W GaN Doherty high
power amplifier (HPA) driven by OFDM signals. Pre-pulsing characterization is used to …
power amplifier (HPA) driven by OFDM signals. Pre-pulsing characterization is used to …