Design of a 30 nm Germanium FinFET by Parameter Optimization
G Mogosetso, C Lebekwe… - Advanced Engineering …, 2022 - Trans Tech Publ
Germanium (Ge) is envisioned as a suitable channel candidate for field-effect transistors
(FET). Properties of Ge such as high carrier mobility, compatibility with Si and adaptability …
(FET). Properties of Ge such as high carrier mobility, compatibility with Si and adaptability …