Semiconductors with high thermal conductivity and electron-hole mobility are of great
importance for electronic and photonic devices as well as for fundamental studies. Among …

Semiconducting cubic boron arsenide (c-BAs) has been predicted to have carrier mobility of
1400 square centimeters per volt-second for electrons and 2100 square centimeters per volt …

Heat dissipation has become a critical challenge in modern electronics, driving the need for
a revolution in thermal management strategies beyond traditional packaging materials …

Although configurational entropy is regarded to be a gene-like performance indicator for
thermoelectric (TE) materials, increasing the configurational entropy alone does not …

Boron arsenide, considered an ideal semiconductor, inevitably introduces arsenic defects
during crystal growth. Here, we develop a unified neural network interatomic potential with …

The lattice thermal conductivity (κph) of metals and semimetals is limited by phonon‐phonon
scattering at high temperatures and by electron‐phonon scattering at low temperatures or in …

Predictions of ultrahigh thermal conductivity in boron arsenide using first-principles
calculations have motivated research to synthesize crystals and investigate their properties …

The interfacial thermal conductance (ITC) plays a crucial role in nanoscale heat transfer, and
its enhancement is of great interest for various applications. In this study, we explore the …

Cubic boron arsenide (BAs) is promising for microelectronics thermal management because
of its high thermal conductivity. Recently, its potential as an optoelectronic material is also …

It has been well established that (i) the thermopower of semiconductors can be enhanced
through a phenomenon known as the drag effect, and (ii) the drag enhancement involves …