Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory
Ferroelectric materials, characterized by their polarization switching capabilities, have
emerged as promising candidates for non-volatile memory applications due to their fast …
emerged as promising candidates for non-volatile memory applications due to their fast …
FeFET-based logic-in-memory supporting SA-free write-back and fully dynamic access with reduced bitline charging activity and recycled bitline charge
Bitwise logic-in-memory (BLiM) is a promising approach to efficient computing in data-
intensive applications by reducing data movement between memory and processing units …
intensive applications by reducing data movement between memory and processing units …
Plasma-Enhanced Atomic Layer Deposition Based Ferroelectric Field-Effect Transistors
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition
of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up …
of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up …
Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer with Low Operating Voltage, Large Memory Window and Negligible Read Latency
YF Chen, KY Huang, CY Kuo… - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
Ge n-channel hybrid memory based on GeO 2/Al 2 O 3 tunnel oxide and HfZrO x (HZO)
ferroelectric charge trapping layer without block oxide was proposed. The hybrid memory …
ferroelectric charge trapping layer without block oxide was proposed. The hybrid memory …
Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature …
Hafnium oxide (HfO2)‐based ferroelectric field effect transistors (FeFETs) revolutionize the
emerging nonvolatile memory area, especially with the potential to replace flash memories …
emerging nonvolatile memory area, especially with the potential to replace flash memories …
Charge-trap memory effect in spray deposited ZnO-based electrolyte-gated transistors operating at low voltage
Charge-trap memory phenomena were demonstrated in an electrolyte-gated transistor
(EGT) using a spray-coated zinc oxide (ZnO) active layer and a cellulose-based electrolyte …
(EGT) using a spray-coated zinc oxide (ZnO) active layer and a cellulose-based electrolyte …
Unstable Retention Behavior in MIFIS FEFET: Accurate Analysis of the Origin by Absolute Polarization Measurement
Ferroelectric field-effect-transistor (FEFET) has emerged as a scalable solution for 3D NAND
and embedded flash (eFlash), with recent progress in achieving large memory window (MW) …
and embedded flash (eFlash), with recent progress in achieving large memory window (MW) …
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs
Compact and energy-efficient computing avenues such as in-memory computing and
processing-in-memory (PIM) are being actively explored to address the limitations of the …
processing-in-memory (PIM) are being actively explored to address the limitations of the …
FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility
Hafnium oxide (HfO2)-based ferroelectric field effect transistors (FeFETs) have
revolutionized the emerging non-volatile memory area, especially with the potential to …
revolutionized the emerging non-volatile memory area, especially with the potential to …
Interfacial-Layer-Free GeSi Nanosheet FeFETs
The substantial memory window (MW) of 1.8 V is achieved by utilizing stacked two
nanosheet (NS) gate-all-around (GAA) Ge0. 95 Si0. 05 ferroelectric field-effect transistors …
nanosheet (NS) gate-all-around (GAA) Ge0. 95 Si0. 05 ferroelectric field-effect transistors …