Back-contacted GaInP/GaAs LED structures by ex-situ dopant redistribution
A Myllynen, SA Shahahmadi, I Radevici… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Compound semiconductor devices utilizing interdigitated back-contact (IBC) designs with a
uniform active region (AR) can enable a new generation of optoelectronic devices with …
uniform active region (AR) can enable a new generation of optoelectronic devices with …
Diffusion-Driven Charge Transport in III–V Optoelectronic Devices
A Myllynen - 2024 - aaltodoc.aalto.fi
Optoelectronics that seamlessly convert electrical energy to optical energy and vice versa
have irreversibly changed our everyday lives through, eg, the ubiquitous light-emitting …
have irreversibly changed our everyday lives through, eg, the ubiquitous light-emitting …