Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect …
Abstract A CMOS-compatible infrared (IR; 1200–1700 nm) detector based on Ge quantum
dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) …
dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) …
Surface‐Engineered Methylammonium Lead Bromide Single Crystals: A Platform for Fluorescent Security Tags and Photodetector Applications
S Mahato, M Tamulewicz‐Szwajkowska… - Advanced Optical …, 2024 - Wiley Online Library
Surface/interface engineering of methylammonium lead bromide (MAPbBr3) single crystals
(SCs) is crucial for carrier generation/recombination, separation, and transportation, thereby …
(SCs) is crucial for carrier generation/recombination, separation, and transportation, thereby …
Ge–Ge0. 92Sn0. 08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
Recent development on Ge 1− x Sn x nanowires with high Sn content, beyond its solid
solubility limit, makes them attractive for all group-IV Si-integrated infrared photonics at the …
solubility limit, makes them attractive for all group-IV Si-integrated infrared photonics at the …
SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared
Abstract Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy
band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous …
band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous …
Progress in group-IV semiconductor nanowires based photonic devices
Despite the dominance in consumer electronics, the use of group-IV semiconductors and
their heterostructures is still limited for photonic devices, attributed to the poor emission …
their heterostructures is still limited for photonic devices, attributed to the poor emission …
Size-tunable electroluminescence characteristics of quantum confined Si nanocrystals embedded in Si-rich oxide matrix
Tunable electroluminescence properties of size-controlled Si nanocrystals embedded in
silicon rich oxide films are demonstrated at room temperature, using an active light emitting …
silicon rich oxide films are demonstrated at room temperature, using an active light emitting …
Implementation of negative capacitance over SiGe sourced Doping-less Tunnel FET
This paper proposes and investigates the performance of SiGe sourced Doping-less Tunnel
Field Effect Transistor (DLTFET) by applying non-hysteretic Negative Capacitance (NC) …
Field Effect Transistor (DLTFET) by applying non-hysteretic Negative Capacitance (NC) …
Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator
In this study, molecular beam epitaxial growth of strain-driven three-dimensional self-
assembled Ge/GeSi islands on silicon-on-insulator (SOI) substrates, along with their optical …
assembled Ge/GeSi islands on silicon-on-insulator (SOI) substrates, along with their optical …
Epitaxial n+-Ge/p+-Si (0 0 1) heterostructures with ultra sharp doping profiles for light emitting diode applications
AM Titova, VG Shengurov, DO Filatov… - Materials Science and …, 2023 - Elsevier
The prototype light emitting diodes (LEDs) were fabricated from the n+-Ge/p+-Si (0 0 1)
heterostructures grown by low-temperature Hot Wire Chemical Vapor Deposition. The n+-Ge …
heterostructures grown by low-temperature Hot Wire Chemical Vapor Deposition. The n+-Ge …