Fermi level pinning dependent 2D semiconductor devices: challenges and prospects
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …
Recent progress of TMD nanomaterials: phase transitions and applications
HH Huang, X Fan, DJ Singh, WT Zheng - Nanoscale, 2020 - pubs.rsc.org
Transition metal dichalcogenides (TMDs) show wide ranges of electronic properties ranging
from semiconducting, semi-metallic to metallic due to their remarkable structural differences …
from semiconducting, semi-metallic to metallic due to their remarkable structural differences …
Recent progress in photoelectrochemical sensors to quantify pesticides in foods: Theory, photoactive substrate selection, recognition elements and applications
H Li, W Sheng, SA Haruna, Q Bei, W Wei… - TrAC Trends in …, 2023 - Elsevier
Pesticides are essential in modern agriculture for pest control, but indiscriminate use
increases concerns about food safety. It is, therefore, necessary to develop fast and effective …
increases concerns about food safety. It is, therefore, necessary to develop fast and effective …
Structure, preparation, and applications of 2D material‐based metal–semiconductor heterostructures
Two‐dimensional (2D) materials' family with its many members and different properties has
recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D …
recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D …
Fermi-level depinning of 2D transition metal dichalcogenide transistors
Recently, mainstream silicon (Si)-based materials and complementary metal oxide
semiconductor (CMOS) technology have been used in developing extremely tiny sized (of a …
semiconductor (CMOS) technology have been used in developing extremely tiny sized (of a …
Performance limit of monolayer MoSi 2 N 4 transistors
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
Sub 10 nm Bilayer Bi2O2Se Transistors
Due to high carrier mobility and excellent air stability, emerging 2D semiconducting
Bi2O2Se is attracting much attention as a potential channel candidate for the next …
Bi2O2Se is attracting much attention as a potential channel candidate for the next …
Excellent device performance of sub‐5‐nm monolayer tellurene transistors
The merging 2D semiconductor tellurene (2D Group‐VI tellurium) is a possible channel
candidate for post‐silicon field‐effect transistor (FETs) due to its high carrier mobility, high …
candidate for post‐silicon field‐effect transistor (FETs) due to its high carrier mobility, high …