This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …

This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …

In this paper, we review and add additional data and understandings on our findings on the
two most common failure modes of GaN-based HEMTs: 1) permanent gate leakage current …

Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to
analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors …

AlGaN/GaN high electron mobility transistors are gaining commercial acceptance for use in
high power and high frequency applications, but the degradation mechanisms that drive …

In this work we report on the two most common failure modes for AlGaN/GaN-based HEMTs:
the gate leakage increase and the output current drop. First, by performing step-stress …

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron
mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the …

This paper reports on a comprehensive on-state reliability evaluation on depletion-mode (V
TH~-4V) AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS …

A brief history of JEDEC qualification standards for Si-based technology is presented.
JEDEC qualification standards have evolved over the years due to Si-technology process …

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics
of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN …