Semiconductor lasers emitting in mid-infrared (IR) range, 2–5μm, have many important
applications in semiconductor industries, military, environmental protection …

We propose and analyze a strain-balanced Ge z Sn 1-z-Si x Ge y Sn 1-xy multiple-quantum-
well (MQW) laser. By incorporating a proper amount of-Sn into Ge, a direct-bandgap GeSn …

Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-,
3.4-, 4.1-, and 4.3-/spl mu/m diodes. The devices utilize multiple-quantum-well (MQW) active …

Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-
infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas …

We present a self-consistent model for the band structure and optical gain spectrum of Ga As
1− x Sb x/GaAs quantum-well (QW) lasers with carrier population. Experimental data …

A new class of quantum cascade lasers based on type-II quantum wells is analyzed. In these
novel mid-and long-wavelength IR lasers, not only can a population inversion be easily …

We report the characterization of a set of broad‐area semiconductor diode lasers with mid‐
wave infrared (3–5 μm) emission wavelengths. The active region of each laser structure is a …

We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb
quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates …

Room-temperature emission is observed as long as 3.26 μm in optically pumped type-I
quantum well lasers on relaxed epitaxial layers grown by molecular-beam epitaxy. A …

Multiple quantum well InAs/GaSb laser heterostructures with type III (type II broken gap)
band alignment in the active region have been grown by molecular beam epitaxy. Intense …