A density functional theory (DFT) and semiclassical Boltzmann transport equations (BTE)
has been used to explore the electronic, magnetic, optical and transport properties of Ga 1 …

The main objective of this article is to deal with and establish a new type of transparent
conducting material by doping Gallium Nitride (GaN) with rare-earth RE (Gd, Sm) elements …

Structural, electronic, magnetic, and optical properties of rare earth (RE) metal element
doped GaN monolayers are investigated using density functional theory, where RE= Nd …

摘要采用密度泛函理论下的第一性原理平面波超软赝势方法, 计算了本征GaN 和不同Lu
掺杂浓度(原子数分数) Ga 1-x Lu x N (x= 0.0625, 0.125, 0.1875, 0.25) 体系的电子结构和光学 …

The third-generation wide bandgap semiconductor GaN currently occupies a hot spot in the
fields of high-power electronics and optoelectronics. Fully exploring its optical and …

This article introduces and develop a new area of transparent conducting material by doping
GaN with two rare earth (RE) impurities (Eu, Sm). Our theoretical calculations confirm that …

We study the electronic, the optical and the transport properties of both bulk materials ErN
and Er 0.125 Ga 0.875 N, which crystallize in zinc-blind and wurtzite structures, respectively …

Résumé Nous avons effectué une étude théorique en utilisant la méthode des ondes planes
augmentées linéarisées à potentiel total (FP-LAPW), basée sur la théorie fonctionnelle de la …

The majority of modern electronic devices are based on semiconductors. Therefore, a lot of
research aims to improve their optical and electronic properties. With this ever increasing …

This paper focuses the heterostructure of Sm0. 125Ga0. 875N/SmN, where this materials
form a quantum well devices. We study the electronic, optic and transport properties of bulk …