Silicon carbide (SiC) may be considered as a model system for the study of field ion
evaporation of carbides, which must be understood to perform accurate analyses of these …

Recently, it was proposed to quantify vacancy concentrations based on laser-assisted atom
probe tomography (APT) data for a (Ti, Al) N film with a nanolamellar architecture, grown by …

Abstract The cubic (Ti 1− x Al x) N y (TiAlN) phase with a nanolamella structure, synthesized
via low pressure chemical vapour deposition (LPCVD), has been widely used in wear …

The accuracy of composition measurements by atom probe tomography is often dependent
on the selected operation mode as well as the applied measurement parameters. The …

For atom probe tomography, multihits and any associated ion pile-up are viewed as an
“Achilles” heel when trying to establish accurate stoichiometric quantification. A significant …

Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron
holography (HR-DFEH) were performed to investigate the composition of a polar [0001] …

Accurate quantification of absolute concentrations represents a major challenge for atom
probe tomography (APT) since the field evaporation process is affected significantly by the …

Scaling and non-planar architectures are key factors helping to advance the semiconductor
field. Accurate 3-dimensional atomic scale information is therefore sought but this presents a …

Atom probe tomography (APT) is emerging as a key nanogeochemistry technique for
diverse geoscience applications. Estimating stoichiometric mineral compositions is …

Atom probe tomography (APT) is a powerful materials characterization technique capable of
measuring the isotopically resolved three-dimensional (3D) structure of nanoscale …