The quest for alternatives to cyclopentadienyl-based ligands has led to a recent renaissance
of N-centered donor ligands in various fields of organometallic and coordination chemistry …

The coating of complex three-dimensional structures with ultrathin metal films is of great
interest for current technical applications, particularly in microelectronics, as well as for basic …

Recent trends in the microelectronics industry are requiring the growth of metallic first row
transition metal films by the atomic layer deposition (ALD) method. The ALD growth of noble …

Deposition of thin films with desired compositions, conformality and bonding to substrates is
a key component in nanotechnology research. The growth of metal films by atomic layer …

Smooth and continuous films of nickel nitride (NiN x) with excellent step coverage were
deposited from a novel nickel amidinate precursor, Ni (MeC (N t Bu) 2) 2, and either …

The bis (tert-butylimido)-molybdenum (VI) framework has been used successfully in the
design of vapor-phase precursors for molybdenum-containing thin films, so understanding …

An effective precursor is a prerequisite and key to the success of atomic layer deposition
(ALD). Currently, the design of more effective precursors is an important aspect of the …

We report the growth of nickel metal films by atomic layer deposition (ALD) employing bis (1,
4-di-tert-butyl-1, 3-diazadienyl) nickel and tert-butylamine as the precursors. A range of …

The bis (tert-butylimido)-molybdenum (VI) framework has previously been used for the
successful atomic layer deposition (ALD) and chemical vapor deposition of many …

Abstract Bis (tert‐butylimido)‐bis (diethylamido) molybdenum [(tBuN) 2Mo (NEt2) 2] and bis
(tert‐butylimido)‐bis (di‐isopropylamido) molybdenum [(tBuN) 2Mo (NiPr2) 2], possible …