Overview of high voltage SiC power semiconductor devices: Development and application

S Ji, Z Zhang, F Wang - CES Transactions on Electrical …, 2017 - ieeexplore.ieee.org
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has
attracted much attention in recent years. This paper overviews the development and status …

99.1% efficient 10 kV SiC-based medium-voltage ZVS bidirectional single-phase PFC AC/DC stage

D Rothmund, T Guillod, D Bortis… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
Due to their extremely high energy demand, data centers are directly supplied from a
medium-voltage (MV) grid. However, a significant part of this energy is dissipated in the …

Highly compact isolated gate driver with ultrafast overcurrent protection for 10 kV SiC MOSFETs

D Rothmund, D Bortis, JW Kolar - CPSS Transactions on …, 2018 - ieeexplore.ieee.org
Silicon Carbide (SiC) semiconductor technology offers the possibility to manufacture power
devices with un-precedented blocking voltages in the range of 10... 15 kV and superior …

Analysis of voltage sharing of series-connected SiC MOSFETs and body-diodes

X Lin, L Ravi, Y Zhang, R Burgos… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In recent years, SiC MOSFETs have gained strong attention in medium-voltage power
conversion applications. To increase the blocking voltage level, series-connection of SiC …

An active voltage balancing control based on adjusting driving signal time delay for series-connected SiC MOSFETs

T Wang, H Lin, S Liu - IEEE Journal of Emerging and Selected …, 2019 - ieeexplore.ieee.org
Limited by low availability, high price, and poor switching performance of high-voltage
power devices, connecting low-voltage devices in series to block much higher voltages is …

An integrated gate driver with active delay control method for series connected SiC MOSFETs

P Wang, F Gao, Y Jing, Q Hao, K Li… - 2018 IEEE 19th …, 2018 - ieeexplore.ieee.org
Series connected SiC MOSFETs technology can apply low rated voltage power device to
medium or high voltage applications. However, voltage unbalance problem limits its …

Hybrid voltage balancing approach for series-connected SiC MOSFETs for DC–AC medium-voltage power conversion applications

X Lin, L Ravi, R Burgos, D Dong - IEEE Transactions on Power …, 2022 - ieeexplore.ieee.org
Using series-connected SiC mosfet s to enable high-speed switching units is desired to
meet the growing demand for high-density medium-voltage power converters. Due to its fast …

Voltage balancing control of series-connected SiC MOSFETs by using energy recovery snubber circuits

F Zhang, X Yang, W Chen… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Power semiconductor switches are usually connected in series to achieve higher blocking
voltage. However, the series-operation of semiconductor devices is not easy due to unequal …

High-speed medium voltage (MV) drive applications enabled by series connection of 1.7 kV SiC MOSFET devices

K Vechalapu, S Hazra, U Raheja, A Negi… - 2017 IEEE Energy …, 2017 - ieeexplore.ieee.org
The medium voltage (MV) high-speed drives are required for traction, wind energy, marine,
aerospace, oil, and gas compressors applications. The MV converter must be able to switch …

Digital control based voltage balancing for series connected SiC MOSFETs under switching operations

K Shingu, K Wada - 2017 IEEE Energy Conversion Congress …, 2017 - ieeexplore.ieee.org
Recently, with research and development of SiC power devices, 1.2 kV SiC MOSFETs have
become commercially available. The parasitic parameters, such as output capacitance, in …