Time domain analysis of active transmission line using FDTD technique (application to microwave/MM-wave transistors)
K Afrooz, A Abdipour, A Tavakoli… - Progress In …, 2007 - jpier.org
In this paper, an accurate modeling procedure for GaAs MESFET as active coupled
transmission line is presented. This model can consider the effect of wave propagation …
transmission line is presented. This model can consider the effect of wave propagation …
An accurate small signal modeling of cylindrical/surrounded gate MOSFET for high frequency applications
P Ghosh, S Haldar, RS Gupta… - JSTS: Journal of …, 2012 - koreascience.kr
An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is
proposed. Admittance parameters of the device are extracted from circuit analysis and …
proposed. Admittance parameters of the device are extracted from circuit analysis and …
Elicitation of scattering parameters of dual-halo dual-dielectric triple-material surrounding gate (DH-DD-TM-SG) MOSFET for microwave frequency applications
N Gupta, P Kumar - Advances in Electrical and Electronic …, 2021 - advances.utc.sk
This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters
of DH-DD-TM-SG MOSFET. Y parameters have been modeled using different small-signal …
of DH-DD-TM-SG MOSFET. Y parameters have been modeled using different small-signal …
Comprehensive Analysis of S-Parameters of 2-D MODFET for Microwave Applications
R Kumar - Wireless Communication with Artificial Intelligence, 2022 - taylorfrancis.com
This paper presents a comprehensive analytical study of an AlGaN/GaN MODFET for the
evaluation of scattering parameters including the important figure of merits like trans …
evaluation of scattering parameters including the important figure of merits like trans …
MOSFET Modeling
Most of the material presented in this article is intended to improve the accuracy of the
microwave circuit performance prediction of MOSFET and to reduce the computer time …
microwave circuit performance prediction of MOSFET and to reduce the computer time …