The phenomenology is reviewed for several enhanced diffusion mechanisms: the normal
ionization-enhanced diffusion mechanism, the Bourgoin mechanism, the energy-release …

In introductory solid-state physics texts we are introduced to the concept of a perfect
crystalline solid with every atom in its proper place. This is a convenient first step in …

It is shown that the bulk radiation damage accompanying sputtering events sets ultimate
limits to the depth resolution attainable in sputter profiling. These limits have been reached …

We present criteria for the stability of ionic materials in ionizing environments, confining
ourselves to cases where the core hole Auger decay mechanism of Knotek and Feibelman …

An energetic electron beam has been used to stimulate crystallization of spatially isolated
amorphous regions in Si, Ge, GaP, and GaAs at 30 and 300 K. In the four materials it was …

This book gives a comprehensive introduction into the interaction of various types of
radiation with solids through atomic collisions and deals with the subsequent production of …

The status of our knowledge of ion-induced defects in semiconductors will be reviewed,
including the charge-state dependence of defects, novel defect migration mechanism and …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

[en] In the present review the mechanisms of radiation stimulated diffusion in solids are
discussed. The results of experimental investigations on the effect of proton, ion, neutron …

Modification of silicon nitride nanopores under electron beam (e-beam) irradiation was
investigated using a scanning electron microscope (SEM). Under e-beam irradiation, all …