Spintronics aims to go beyond the charge-based paradigm of silicon-based microelectronics
by utilizing the spin degree of freedom for memory, storage and computing applications …

ABX3 perovskites, as the largest family of crystalline materials, have attracted tremendous
research interest worldwide due to their versatile multifunctionalities and the intriguing …

Electrical control of a magnetic state of matter lays the foundation for information
technologies and for understanding of spintronic phenomena. Spin–orbit torque provides an …

Piezomagnetism couples strain linearly to magnetic order, implying that it can produce and
control magnetization. However, unlike magnetostriction, which couples magnetization …

Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …

In recent years, the field of antiferromagnetic spintronics has been substantially advanced.
Electric‐field control is a promising approach for achieving ultralow power spintronic devices …

Out-of-plane spin polarization σ z has attracted increasing interests of researchers recently,
due to its potential in high-density and low-power spintronic devices. Noncollinear …

Cubic materials host high crystal symmetry and hence are not expected to support
anisotropy in transport phenomena. In contrast to this common expectation, here we report …

Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …

The anomalous Hall effect (AHE) is a well-known fundamental property of ferromagnetic
metals, commonly associated with the presence of a net magnetization. Recently, an AHE …