Low-dimensional semiconductors such as one-dimensional carbon nanotubes could be used to shrink the gate length of metal–oxide–semiconductor field-effect transistors …
S Ding, Y Liu, Q Shang, B Gao, F Yao, B Wang… - Nano Letters, 2024 - ACS Publications
Microscopic study of the nucleation and growth of atomic layer deposition (ALD) dielectrics onto carbon nanotubes (CNTs) is an essential while challenging task toward high …
CY Hsu, MA Mustafa, A Yadav, KM Batoo… - Journal of Molecular …, 2024 - Springer
Abstract Context The abilities of Co-Al18P18, Ni-Al21N21, Fe-B24N24, Mn-B27P27, Ti-C60 and Cu-Si72 as catalysts for N2-RR to create the NH3 are investigated by theoretical levels …
K Otsuka, T Sugihara, T Inoue, W Jia, S Matsushita… - Nano Research, 2023 - Springer
A semiconductor/dielectric interface is one of the dominant factors in device characteristics, and a variety of oxides with high dielectric constants and low interface trap densities have …
Here, the abilities of Fe-Si42, Fe-Al21N21, Cu-C60, Cu-B30P30, Fe-SiNT (9, 0), Fe-AlNNT (9, 0), Cu-CNT (6, 0) and Cu-BPNT (6, 0) as nano-catalysts of OER and ORR processes are …
C Yan, Q Wei, Q Chen, L Zhang - Journal of Physics and Chemistry of …, 2023 - Elsevier
This study examined the potential of using Fe-C 44 and Fe-Si 44 to catalyze the reaction steps in the oxygen reduction reaction (ORR) in an acidic environment based on theoretical …
Thin high-k dielectrics play a crucial role in achieving low leakage and high capacitance dynamic random-access memory (DRAM) cells. Various high-k materials, such as …