Design of stable active matrix organic light-emitting diode (AMOLED) displays comes with
significant challenges that stem from the electrical property of the backplane materials, line …

The effects of bias stress on transistor performance are important when considering
nontraditional channel materials for thin film transistors. Applying a gate bias stress to …

This paper reviews amorphous silicon thin-film-transistor (TFT) degradation with electrical
stress, examining the implications for various types of circuitry. Experimental measurements …

Shifts in the threshold voltage (Δ V th) of transparent zinc tin oxide (ZTO) transistors under
gate bias stress are studied. The effect of composition and processing temperature on the …

Electronic systems on flexible substrates posses the advantage of mechanical flexibility in
actual use, but also provide more rugged rollable devices and may therefore result in lower …

The characteristics of transparent zinc tin oxide thin film transistors (TTFTs) upon illumination
with visible light are reported. Generally, a reversible decrease of threshold voltage V th⁠ …

In electronics, the field‐effect transistor (FET) is a crucial cornerstone and successful
integration of this semiconductor device into circuit applications requires stable and ideal …

Despite dramatic improvements in the electronic characteristics of organic semiconductors,
the low operational stability of organic field‐effect transistors (OFETs) hinders their direct use …

We propose a new hydrogenated amorphous silicon thin-film transistor (a-Si: H TFT) pixel
circuit for an active matrix organic light-emitting diode (AMOLED) employing a voltage …

Metal-oxide semiconductors are considered promising alternative materials in the field of flat
panel display industry due to their advantages, such as high mobility, transparency …