Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

In situ and ex situ transport measurements on epitaxial Co (0001)/Al 2 O 3 (0001) layers with
thickness d= 7–300 nm are used to quantify the resistivity ρ scaling due to electron surface …

Positron annihilation and atom probe tomography were used to study vacancy-type defects
and their interaction with oxygen in 100 nm thick Ni x Al1–x deposited on a SiO2/Si …

This work explores the electroless deposition of pure Co film on TaN substrate using Ti 3+
as a reducing agent for interconnect metallization. Continuous and dense electroless …

Corrosion inhibitors are essential additives for metal CMP (chemical mechanical
planarization) slurries and post-metal CMP cleaning solutions. They effectively address …

In this study, we demonstrate a quasi van der Waals epitaxy approach to prepare an
epitaxial Ru ultrathin film on large-scale, single-crystalline, monolayer graphene. Physical …

Co films were electrodeposited with different additives including dimethylglyoxime, sodium
chloride, and mercapto-propanesulfonate (MPS). A systematic study was conducted using …

Electrodeposition technology is the key core technology for achieving micro/nanoscale
interconnection in high-end chip manufacturing. Recently, cobalt interconnect structures …

Abstract Ruthenium (Ru)—a high-melting-point precious metal—has attracted attention for
use as ultrafine interconnections in large-scale integrations. This is because the resistivity of …