Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP
We investigate the influence of the Sb flux on the growth of GaSb islands on a highly
mismatched (001) GaP substrate. Between low and medium Sb flux values, standard …
mismatched (001) GaP substrate. Between low and medium Sb flux values, standard …
Growth of III/Vs on silicon: nitrides, phosphides, arsenides and antimonides
The growth of III/V semiconductors on Silicon substrates has attracted great attention since
quite some time as several promising device concepts rely on the defect-free integration of …
quite some time as several promising device concepts rely on the defect-free integration of …
Strain-induced optical anisotropy in self-organized quantum structures at the E1 transition
JA Prieto, G Armelles, C Priester, JM Garcıa… - Applied Physics …, 2000 - pubs.aip.org
In-plane optical anisotropies of 001-oriented InAs/InP self-assembled quantum wires and
dots structures are studied by means of photoreflectance in the spectral region of the E1 …
dots structures are studied by means of photoreflectance in the spectral region of the E1 …
[PDF][PDF] Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs
R Timm - 2008 - depositonce.tu-berlin.de
GaSb quantum dots (QDs) in a GaAs matrix exhibit a type-II band alignment with a strong
hole localization and only weakly Coulomb-bound electrons, making these structures very …
hole localization and only weakly Coulomb-bound electrons, making these structures very …
[图书][B] Real-time characterization of III-V compound semiconductor epitaxy: Application to '6.1'materials
S Kim - 2004 - search.proquest.com
The antimonides are potentially highly useful materials for low-power electronic-device
applications. However, unlike P and As the volatility of Sb is very low, comparable to that of …
applications. However, unlike P and As the volatility of Sb is very low, comparable to that of …