Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

Three topical materials systems are discussed from the point of view of point defect
characterization with positron annihilation spectroscopy. The family of III‐nitride …

An A-center is an oxygen interstitial atom near a lattice vacancy and is one of the most
common impurity-defect pairs in Czochralski-grown silicon crystals. In the present study …

Electronic structure calculations are used to investigate the binding energies of defect pairs
composed of lattice vacancies and phosphorus or arsenic atoms (E centers) in silicon …

The electronic properties of defects resulting from electron irradiation of germanium at low
temperatures have been investigated. The recent success in preparing n+ p junctions on …

The thermoelectric materials that work in radioisotope thermoelectric generators or space
reactor power sources will be exposed to neutron irradiation and gamma irradiation for a …

Simulation of defect interactions in binary/ternary group IV semiconductor alloys at the
density functional theory level is difficult due to the random distribution of the constituent …

Thermal evolution of vacancy complexes was studied in P-doped ([P]= 10 18 cm− 3) proton
irradiated Si 1− x Ge x with Ge contents of 10%, 20%, and 30% in the range of 250–350° C …

The large increase in the p-type conductivity observed when nitrogen is added to GaSb has
been studied using positron annihilation spectroscopy and ab initio calculations. Doppler …

Positron annihilation spectroscopy in the Doppler and coincidence Doppler mode was
applied on Ge 1− x Sn x epitaxial layers, grown by chemical vapor deposition with different …