A luminescence database for minerals and materials has been complied from the literature,
the aim being to create a resource that will aid in the analysis of luminescence spectral of …

This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a
special focus on their lattice location and on the optical activation by means of thermal …

Investigations of the luminescent properties of Pr‐, Eu‐, Tb‐and Tm‐implanted AlN thin films
at temperature in the range 9–830 K are reported. The temperature studies of …

Much effort has been put to achieve optoelectronic devices based on Er doped GaN,
operating on the intra-4f-shell transitions of erbium. The key issue for good understanding of …

A novel green phosphor, Sr 2 MgB 2 O 6: Tb 3+, Li+ for white light-emitting diodes was
prepared by solid-state reactions, and its structure and luminescence properties were …

The comparative investigation of the luminescence properties of Er3+ in low phonon energy
tellurite glasses codoped with Ce3+, Eu3+, and Tb3+, respectively, are presented. The …

We report crystal-field splitting investigations of Gd 3+(4 f 7) energy levels determined from
high resolution energy (Stark) level cathodoluminescence (CL) spectroscopy of Gd …

We report a detailed analysis of the cathodoluminescence spectra of Tm 3+-implanted 2H-
aluminum nitride (AlN) covering the wavelength range between 290 and 820 nm at …

Red and red/blue cathodoluminescence in the temperature range 12 to 300 K was obtained
from single-and polycrystal cubic boron nitride bulk samples implanted with europium and …

Terbium lattice site location and optical emission in Tb implanted Al x Ga 1− x N (0≤ x≤ 1)
samples grown by halide vapour phase epitaxy on (0001) sapphire substrates are …