We propose a novel laser diode (LD) fabrication process that yields 100 μm-cavity GaN-
based edge emitting LDs with cleaved facets. In this process, epitaxial layers for LDs are …

We have fabricated μLEDs of mesa sizes 10× 10 and 15× 15 μm 2 on native (20 21⁠)
semipolar substrates and on epitaxial lateral overgrown (ELO) wings of the (20 21⁠) …

An asymmetric multiple quantum well (MQW) without the first quantum barrier layer is
designed, and its effect on the device performance of GaN-based blue LDs has been …

Electrically-pumped AlGaN-based edge-emitting laser diodes with a buried tunnel junction
(TJ) for sub-300 nm emission are designed in this paper. Hole injection is one of the major …

A novel deep-ridge laser structure with atomic-layer deposition (ALD) sidewall passivation
was proposed that enhances the optical characteristics of 8-µm ridge width III-nitride violet …

In this work, we propose using the low defect density wing region arising from epitaxial
lateral overgrowth (ELO) for the development of Group III-nitride flip-chip vertical-cavity …

We demonstrate removal of homoepitaxially grown semi-polar gallium nitride (GaN) layers
from the native substrates. The weak link at the interface of the epitaxial lateral overgrowth …

We have successfully demonstrated InGaN/GaN edge-emitting laser diodes (EELDs) on a
fully coalesced epitaxial lateral overgrown film from a c-plane GaN substrate. We achieve a …

Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial
lateral overgrown (ELO) wing of a semipolar {20 2¯ 1} GaN substrate, termed an ELO wing …

We propose a new Fabry-Perot (FP) GaN laser fabrication method utilizing an epitaxial
lateral overgrowth (ELO) technique and m-plane cleavability of the GaN crystal. The …