Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …

Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D
layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates …

Meltback etching, a deteriorating chemical reaction occurring between gallium and silicon
under typical metal organic chemical vapor deposition growth conditions, is a common …

Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap
optoelectronic heterostructures or as a release layer to allow lift-off of grown three …

Abstract Ag-doped ZnO (ZnO: Ag) films were deposited on ZnO buffer layers by radio
frequency reactive magnetron sputtering. The effect of Ag doping content on the …

In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a
plasma deposition technique, for the first time. We present a new deposition mechanism for …

The mechanical release of III‐nitride devices using h‐BN is a promising approach for
heterogeneous integration. Upscaling this technology for industrial level requires solutions …

Current research presents a new deposition method for GaN thin films that produces in a
very short production time for GaN-based solid-state applications. A Mo doped GaN thin film …

Full 2 inch GaN epilayers were lifted off GaN and c-sapphire substrates by preferential
chemical dissolution of sacrificial ZnO underlayers. Modification of the standard epitaxial lift …

Gallium nitride (GaN) films on high-thermal-conductivity substrates have attracted
considerable attention for their applications in high-power light-emitting diodes and …