Two-dimensional semiconductors for transistors
In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue
to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited …
to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited …
Electronics based on two-dimensional materials
The compelling demand for higher performance and lower power consumption in electronic
systems is the main driving force of the electronics industry's quest for devices and/or …
systems is the main driving force of the electronics industry's quest for devices and/or …
2D materials for future heterogeneous electronics
Graphene and two-dimensional materials (2DM) remain an active field of research in
science and engineering over 15 years after the first reports of 2DM. The vast amount of …
science and engineering over 15 years after the first reports of 2DM. The vast amount of …
Challenges and limitations of CMOS scaling for FinFET and beyond architectures
A Razavieh, P Zeitzoff, EJ Nowak - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Scaling trends of FinFET architecture, with focus on Front-End-of-Line (FEOL), and Middle-of-
Line (MOL) device parameters, is systematically investigated. It is concluded that the …
Line (MOL) device parameters, is systematically investigated. It is concluded that the …
van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides
L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …
promising candidates for next-generation electronics owing to their atomically thin structures …
A FinFET with one atomic layer channel
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-
semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized …
semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized …
16.2 A 0.19 pJ/b PVT-variation-tolerant hybrid physically unclonable function circuit for 100% stable secure key generation in 22nm CMOS
SK Mathew, SK Satpathy, MA Anders… - … Solid-State Circuits …, 2014 - ieeexplore.ieee.org
Physically unclonable function (PUF) circuits are low-cost cryptographic primitives used for
generation of unique, stable and secure keys or chip IDs for device authentication and data …
generation of unique, stable and secure keys or chip IDs for device authentication and data …
Miniaturization of CMOS
HH Radamson, X He, Q Zhang, J Liu, H Cui, J Xiang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
One-sided schmitt-trigger-based 9T SRAM cell for near-threshold operation
This paper presents a one-sided Schmitt-trigger-based 9T static random access memory cell
with low energy consumption and high read stability, write ability, and hold stability yields in …
with low energy consumption and high read stability, write ability, and hold stability yields in …
Emerging applications for high K materials in VLSI technology
RD Clark - Materials, 2014 - mdpi.com
The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI)
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …