Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
2D oxides for electronics and optoelectronics
In recent years, 2D oxides have attracted considerable attention due to their novel physical
properties and excellent stability. With the efforts of researchers, significant progress has …
properties and excellent stability. With the efforts of researchers, significant progress has …
Direct roll transfer printed silicon nanoribbon arrays based high-performance flexible electronics
A Zumeit, AS Dahiya, A Christou, D Shakthivel… - npj Flexible …, 2021 - nature.com
Transfer printing of high mobility inorganic nanostructures, using an elastomeric transfer
stamp, is a potential route for high-performance printed electronics. Using this method to …
stamp, is a potential route for high-performance printed electronics. Using this method to …
New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials
Abstract Source‐gated transistors (SGTs), which are typically realized by introducing a
source barrier in staggered thin‐film transistors (TFTs), exhibit many advantages over …
source barrier in staggered thin‐film transistors (TFTs), exhibit many advantages over …
A critical review on performance, reliability, and fabrication challenges in nanosheet FET for future analog/digital IC applications
This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …
Optical and electrical characterization of a ZnO/coronene-based hybrid heterojunction photodiode
Metal oxide hexagonal ZnO thin film with thickness of approximately 509 nm was
successfully grown on a glass/ITO substrate by electrochemical deposition. It was observed …
successfully grown on a glass/ITO substrate by electrochemical deposition. It was observed …
Printed n-and p-channel transistors using silicon nanoribbons enduring electrical, thermal, and mechanical stress
Printing technologies are changing the face of electronics with features such as resource-
efficiency, low-cost, and novel form factors. While significant advances have been made in …
efficiency, low-cost, and novel form factors. While significant advances have been made in …
High-performance p-channel transistors on flexible substrate using direct roll transfer stamping
A Zumeit, AS Dahiya, A Christou… - Japanese Journal of …, 2022 - iopscience.iop.org
Flexible electronics with high-performance devices are crucial for transformative advances
in several emerging and traditional applications. To address this need, herein we present p …
in several emerging and traditional applications. To address this need, herein we present p …
High-performance organic source-gated transistors enabled by the indium-tin oxide–diketopyrrolopyrrole polymer interface
H Lee, YE Kim, J Bae, S Jung… - ACS applied materials …, 2023 - ACS Publications
Source-gated transistors are a new driver of low-power high-gain thin-film electronics.
However, source-gated transistors based on organic semiconductors are not widely …
However, source-gated transistors based on organic semiconductors are not widely …
High‐Performance n‐Channel Printed Transistors on Biodegradable Substrate for Transient Electronics
AS Dahiya, A Zumeit, A Christou… - Advanced Electronic …, 2022 - Wiley Online Library
Innovative methods to fabricate and integrate biodegradable high‐grade electronics on
green substrates are needed for the next generation of robust high‐performance transient …
green substrates are needed for the next generation of robust high‐performance transient …