Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …

Bear, LLP (60) Division of application No. 09/291,807, filed on Apr. 14, Ca 1999, now Pat.
No. 6,342,277, which is a continuation-in-(57) ABSTRACT part of application No …

The present invention provides for sequential chemical vapor deposition by employing a
reactor operated at low pressure, a pump to remove excess reactants, and a line to …

(63) Continuation of application No. 09/291,807, filed on Apr. 14, 1999, now Pat. No.
6,342,277, which is a continuation-EP O 442 490 A1 8/1991 in-part of application No …

5,321,713 A 6/1994 Khan(57) ABSTRACT 5,330,610 A 7/1994 Eres 5,356,673 A* 10/1994
Schmitt et a1~ The present invention provides for sequential chemical 57374570 A 12/1994 …

High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing
advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a …

The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and
spintronic sensor applications. We introduce a growth process that significantly improves the …

We report on the preparation of the first complete extreme temperature Hall sensor. This
means that the extreme-temperature magnetic sensitive semiconductor structure is built-in …

The highest mobility InSb epilayer grown to date by organometallic vapor phase epitaxy has
been achieved by utilizing high‐purity organometallic sources, choosing a reactor geometry …