This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …

III–V nanowire transistors are promising candidates for very high frequency electronics
applications. The improved electrostatics originating from the gate-all-around geometry …

This article reports on the investigation and optimization of cryogenic noise mechanisms in
InGaAs metamorphic high-electron-mobility transistors (mHEMTs). HEMT technologies with …

We present a systematic study on the gate length (scaling behavior and the impact of the
side-recess spacing (on dc and high-frequency characteristics of In0. 8Ga0. 2As quantum …

In this paper, we present the development of submillimeter-wave monolithic integrated
circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate …

A metamorphic high electron mobility transistor (mHEMT) technology with 20 nm gate length
for manufacturing of terahertz monolithic integrated circuits (TMICs) is presented. The …

Thermal and small-signal model parameters analysis have been carried out on 0.5 μm×(2×
100 μm) AlGaAs/GaAs HEMT grown on semi-insulating GaAs substrate and 0.25 μm×(2× …

We present sub-30-nm In 0.8 Ga 0.2 As composite-channel high-electron-mobility transistors
(HEMTs) with outstanding dc and high-frequency characteristics. We adopted a composite …

High electron mobility transistors (HEMTs) are the basic building block in microwave
monolithic integration circuits (MMICs) for broad applications in micrometer (0.3–100 GHz) …

In this work, we explored the effective mobility of In-rich In x Ga 1-x As/In 0.52 Al 0.48 As (x>
0.53) quantum well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate …