Terahertz detection in zero-bias InAs self-switching diodes at room temperature
A Westlund, P Sangaré, G Ducournau… - Applied Physics …, 2013 - pubs.aip.org
RF characterization of InAs self-switching diodes (SSDs) is reported. On-wafer
measurements revealed no roll-off in responsivity in the range of 2–315 GHz. At 50 GHz, a …
measurements revealed no roll-off in responsivity in the range of 2–315 GHz. At 50 GHz, a …
Room temperature direct and heterodyne detection of 0.28–0.69-THz waves based on GaN 2-DEG unipolar nanochannels
C Daher, J Torres, I Iñiguez-De-La-Torre… - … on Electron Devices, 2015 - ieeexplore.ieee.org
An experimental demonstration of GaN-based asymmetric nanodiodes as direct and
heterodyne detectors up to 0.69 THz has been performed at room temperature …
heterodyne detectors up to 0.69 THz has been performed at room temperature …
Self-switching diodes as RF rectifiers: evaluation methods and current progress
In the advancement of the Internet of Things (IoT) applications, widespread uses and
applications of devices require higher frequency connectivity to be explored and exploited …
applications of devices require higher frequency connectivity to be explored and exploited …
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
A Westlund, P Sangaré, G Ducournau… - Solid-State …, 2015 - Elsevier
Abstract Design optimization of the InAs self-switching diode (SSD) intended for direct zero-
bias THz detection is presented. The SSD, which consists of nanometer-sized channels in …
bias THz detection is presented. The SSD, which consists of nanometer-sized channels in …
Operation of GaN planar nanodiodes as THz detectors and mixers
I Iñiguez-De-La-Torre, C Daher… - IEEE Transactions …, 2014 - ieeexplore.ieee.org
In this paper, we perform, by means of Monte Carlo simulations and experimental
measurements, a geometry optimization of GaN-based nano-diodes for broadband …
measurements, a geometry optimization of GaN-based nano-diodes for broadband …
On the effect of δ-doping in self-switching diodes
Lowering the carrier concentration is presented as a way to considerably improve the
performance of self-switching diode (SSD) detectors. A physics-based theoretical model was …
performance of self-switching diode (SSD) detectors. A physics-based theoretical model was …
Study of InAlAs/InGaAs self-switching diodes for energy harvesting applications
IE Cortes-Mestizo, E Briones, J Briones… - Japanese Journal of …, 2015 - iopscience.iop.org
In order to improve the rectification efficiency and current–voltage characteristics of self-
switching diodes (SSD) the DC response is analyzed using technology computer aided …
switching diodes (SSD) the DC response is analyzed using technology computer aided …
Graphene Self Switching Diodes with high rectification ratios
F Al-Dirini, E Skafidas… - 2013 13th IEEE …, 2013 - ieeexplore.ieee.org
This paper presents a new Graphene nanodevice that acts as a two terminal nanorectifier
with a high rectification ratio, without the need for a pn junction or a third gate terminal. The …
with a high rectification ratio, without the need for a pn junction or a third gate terminal. The …
Fabrication and DC characterization of InAs/AlSb self-switching diodes
A Westlund, G Moschetti, H Zhao… - 2012 International …, 2012 - ieeexplore.ieee.org
Fabrication and DC measurements of an InAs/AlSb self-switching diode (SSD), aimed for
THz detection, is presented. An SSD with a channel width of 160 nm and a trench width of …
THz detection, is presented. An SSD with a channel width of 160 nm and a trench width of …
Performance Analysis of EOS and SDI Detectors in THz Band
M El Ghzaoui - Terahertz Wireless Communication Components and …, 2022 - Springer
Over time, scientists and engineers exploited the frequency bands of the electromagnetic
spectrum. Starting with the visible spectrum, they gradually developed sources and …
spectrum. Starting with the visible spectrum, they gradually developed sources and …