Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

We determined the Gibbs free energy of formation—ie, the formation enthalpy and entropy—
as well as the charge state of Ga vacancies in n-type GaAs by directly probing the vacancy …

We use positron annihilation to study vacancy defects in GaAs grown at low temperatures
(LT–GaAs). The vacancies in as-grown LT–GaAs can be identified to be Ga monovacancies …

We report a first-principles method for calculating the momentum density of positron-electron
pairs in materials, which can be accurately measured, in a wide momentum range, by …

The main mechanism for the strengthening of aluminium‐copper alloys of the 2xxx type is
hardening by copper‐rich precipitates. However, their size, distribution, and crystal structure …

We have used positron annihilation spectroscopy and infrared absorption measurements to
study the Ga sublattice defects in epitaxial G a 1-x M nx A s with Mn content varying from 0 …

We identified the charge carrier compensation mechanism in Te-doped GaAs with
atomically resolved scanning tunneling microscopy. Three types of defects were found …

Abstract In quasicrystalline Al 70 Pd 21 Mn 9, atomic processes as, eg, thermal vacancy
formation are studied specifically by a combination of positron lifetime and two-detector …

Positron lifetime measurements and Doppler-broadening spectroscopy were combined to
investigate the defect properties during Cu diffusion in Te-doped GaAs. The diffusion of Cu …

We have used positron annihilation spectroscopy to study the introduction of point defects in
Zn-diffused semi-insulating GaAs. The diffusion was performed by annealing the samples for …